smd type transistors 1 emitter 2base 3 collector features epitaxial planar die construction ideal for medium power amplification and switching high current gain absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 300 ma power dissipation p d 200 mw thermal resistance, junction to ambient r ja 625 /w operating and storage and temperature range t j ,t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100 a, i e =0 30 v collector cutoff current i cbo v cb = 30v, i e = 0 100 na collector cutoff current i ebo v ce = 10v, i c = 0 100 na i c = 10ma, v ce = 5v 5,000 i c = 100ma, v ce =5v 10,000 collector-emitter saturation voltage v ce(sat) i c = 100ma, i b = 100 a 1.5 v base-emitter saturation voltage v be(sat) i c = 100ma,v ce =5.0v 2.0 v output capacitance c obo v cb = 10v, f = 1.0mhz, i e =0 8.1 pf input capacitance c ibo v eb =0.5v,f=1.0mhz,i c = 0 15 pf current gain-bandwidth product f t v ce =5.0v,i c =10ma,f = 100mhz 125 mhz dc current gain h fe marking marking k2d sales@twtysemi.com 1of 3 http://www.twtysemi.com smd type transistors MMSTA13 product specification 4008-318-123
smd type transistors 0 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 p , p o w e r d i s s i p a t i o n ( m w ) d t , a m b i e n t t e m p e r a t u r e ( c ) a f i g . 1 , m a x p o w e r d i s s i p a t i o n v s a m b i e n t t e m p e r a t u r e 1 0 0 1 5 0 0 1 1 0 1 0 0 1 0 0 0 v , c o l l e c t o r t o e m i t t e r c e ( s a t ) s a t u r a t i o n v o l t a g e ( v ) i , c o l l e c to r c u r r e n t ( m a ) c f ig . 2 , c o ll e c t o r e m it t e r s a t u r a t io n v o lta g e v s . c o ll e c t o r c u r r e n t t = 2 5 c a t = - 5 0 c a t = 1 5 0 c a 0 . 4 5 0 . 4 0 0 . 5 0 0 . 5 5 0 . 6 0 0 . 6 5 0 . 7 0 0 . 7 5 0 . 8 0 0 . 8 5 0 . 9 0 0 . 9 5 1 . 1 0 1 . 0 5 1 . 0 0 i c i b = 1 0 0 0 1 0 0 1 , 0 0 0 1 0 0 , 0 0 0 1 , 0 0 0 , 0 0 0 1 0 , 0 0 0 1 1 0 1 0 0 0 1 0 0 h , d c c u r r e n t g a i n f e i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 3 , d c c u r r e n t g a in v s c o ll e c t o r c u r r e n t t = - 5 0 c a t = 2 5 c a t = 1 5 0 c a v = 5 v c e 0 . 1 1 1 0 1 0 0 v , b a s e e m i t t e r v o l t a g e ( v ) b e ( o n ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 4 , b a s e e m i t t e r v o l ta g e v s . c o l l e c t o r c u r r e n t t = 2 5 c a t = - 5 0 c a t = 1 5 0 c a 0 . 3 0 . 2 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 1 . 3 1 . 6 1 . 5 1 . 4 v = 5 v c e sales@twtysemi.com 2of 3 http://www.twtysemi.com smd type transistors MMSTA13 product specification 4008-318-123
smd type transistors MMSTA13 1 1 0 1 0 0 0 1 0 0 1 1 0 1 0 0 f , g a i n b a n d w i d t h p r o d u c t ( m h z ) t i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 5 , g a in b a n d w id t h p r o d u c t v s c o ll e c t o r c u r r e n t v = 5 v c e sales@twtysemi.com 3of 3 http://www.twtysemi.com product specification 4008-318-123
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